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ZXMN3B04N8
ELECTRICAL CHARACTERISTICS (at T amb = 25°C unless otherwise stated)
PARAMETER
SYMBOL
MIN.
TYP.
MAX. UNIT CONDITIONS
STATIC
I =250 A, V DS = V GS
Drain-source   breakdown voltage
Zero gate voltage drain current
Gate-body leakage
Gate-source threshold voltage
V (BR)DSS
I DSS
I GSS
V GS(th)
30
0.7
0.5
100
V
A
nA
V
I D =250 A, V GS =0V
V DS =30V, V GS =0V
V GS = 12V, V DS =0V
D
Static drain-source on-state
resistance (1)
R DS(on)
0.021
0.028
0.025
0.040
V GS =4.5V, I D =7.2A
V GS =2.5V, I D =5.7A
Forward transconductance
(1) (3)
g fs
24
S
V DS =15V,I D =7.2A
DYNAMIC (3)
Input capacitance
Output capacitance
Reverse transfer capacitance
C iss
C oss
C rss
2480
318
184
pF
pF
pF
V DS =15V, V GS =0V,
f=1MHz
SWITCHING (2) (3)
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate-source charge
Gate-drain charge
t d(on)
t r
t d(off)
t f
Q g
Q gs
Q gd
9
11.5
40
16.6
23.1
4.9
6.2
ns
ns
ns
ns
nC
nC
nC
V DD =15V, V GS =4.5V
I D =1A
R G ? 6.0 ,
V DS =15V,V GS =4.5V,
I D =7.2A
SOURCE-DRAIN DIODE
Diode forward voltage (1)
V SD
0.85
0.95
V
T J =25°C, I S =8A,
V GS =0V
Reverse recovery time (3)
Reverse recovery charge (3)
t rr
Q rr
17.9
10
ns
nC
T J =25°C, I F =3.2A,
di/dt= 100A/ s
NOTES
(1) Measured under pulsed conditions. Pulse width
300 s; duty cycle
2%.
(2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.
ISSUE 2 - MAY 2004
SEMICONDUCTORS
4
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